Analysis of GaAsxN1-x III-V Ternary Semiconductor Band Energy Gap

Authors: V.Rama Murthy & Alla.Srivani Research Scholar Rayalaseema College P.G Department of Physics, T.J.P.S College Guntur-6 A.P India Abstract: GaAsxN1-x III-V Ternary semiconductor is essential being an x of the constituent within the semiconductor will have significant alterations in calculating Physical Property like Band Energy Gap. These Ternary Compounds could be produced from binary compounds […]
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