Analysis of HgxZn1-xTe II-Mire Ternary Semiconductor Band Energy Gap

Authors: V.Rama Murthy & Alla Srivani Research Scholar Rayalaseema college Kurnool

Abstract: HgxZn1-xTe II-Mire Ternary semiconductor is essential being an x of the constituent within the semiconductor will have significant alterations in calculating Physical Property like Band Energy Gap. These Ternary Compounds could be produced from binary compounds HgTe and ZnTe by changing half from the atoms in a single sub lattice by lower valence atoms, another half by greater valence atoms and looking after average quantity of valence electrons per atom. The subscript X refers back to the alloy content or power of the fabric, which describes proportion from the material added and changed by alloy material. This paper signifies the HgxZn1-xTe II-Mire Ternary Semiconductor Band Energy Gap values

Key phrases: Band Energy Gap, Composition, Electro Negativity, Molecular weight, density, optical Polarizability, II-Mire Ternary Semiconductors.

Introduction: 1)Within this opening talk of HgxZn1-xTe II-Mire Ternary Semiconductor Band Energy Gap Electronegativity values of Ternary Semiconductors are denoted by symbols XM and XN and Band Energy Gap is denoted by Eg

2)Linus Pauling first suggested Electro Negativity in 1932 like a growth and development of valence bond theory,[2] it’s been proven to correlate with many other chemical qualities.

3)The continual variation of physical qualities like Electro Negativity of ternary compounds with relative power of ingredients is the most utility in growth and development of solid-condition technology.

4)In our work, the solid solutions owned by HgxZn1-xTe II-Mire Ternary Semiconductor Band Energy Gap happen to be looked into. To be able to have better knowledge of performance of those solid solutions for just about any particular application, it might be quite essential to focus on the physical qualities like Electro Negativity of those materials.

5)Lately not one other type of material of semiconductors has attracted a lot scientific and commercial attention such as the II-Mire Ternary compounds.

6)Doping of Hg component inside a Binary semiconductor like ZnTe and altering the composition of do pant has really led to cut in Band Energy Gap.

7)Thus effect of do pant boosts the conductivity and reduces this guitar rock band Energy Gap and finds extensive programs

8)The current analysis relates Band Energy Gap and Electro Negativity with variation of composition for HgxZn1-xTe II-Mire Ternary Semiconductor.

9)The fair agreement between calculated and reported values of Band Energy Gaps of HgTe and ZnTe Binary semiconductors give further extension of Band Energy Gaps for Ternary semiconductors.

10)The current work opens new type of method of Band Energy Gap studies in HgxZn1-xTe II-Mire Ternary Semiconductor

Objective: The primary Objective of the paper would be to calculate HgxZn1-xTe II-Mire Ternary Semiconductor Band Energy Gap values

Purpose: The objective of study is HgxZn1-xTe II-Mire Ternary Semiconductor Band Energy Gap and effect of concentration in Electro Negativity values of II-Mire Ternary Semiconductors to represent additivity principle even just in really low concentration range. This paper includes Electro Negativity values of II-Mire ternary semiconductors and Band Energy Gap values in composition range (

Theoretical Impact: Formula: Eg=[28.8/(2(XM-XN)2)1/4*(1-f12/1 2*f12)]Energy (XM/XN)2 Where:f12=[4pN/3]*[aM12*r12]/M12

X value00.10.150.20.250.30.350.40.450.5 1-x value10.90.850.80.750.70.650.60.550.5

CompoundHgxZn1-xTe XM value1.651.6820491.6983061.714721.7312931.748031.764921.7819781.7992011.81659 XN value2.12.12.12.12.12.12.12.12.12.1

(XM/XN)two .6173470.6415620.6540230.6667270.6796770.692880.7063360.7200560.7340420.748299 (XM-XN)20.20250.1746830.1613580.1484410.1359450.123890.1122790.1011380.090480.080321

2(XM-XN)21.1506911.1287171.118341.1083711.0988121.089671.0809341.0726191.0647241.057253 (2(XM-XN)2)1/41.0357141.0307331.0283561.0260571.0238371.02171.0196471.017681.0158031.014016

28.8/(2(XM-XN)2)1/427.8069227.9412828.0058728.0686328.1294728.188328.2450728.2996528.3519728.40192

M-VALUES192.99207213220227234240247254261 RO-VALUES6.346.526.616.716.86.896.987.077.167.26 ALPHA-M 95.9799.1101102104105

ALPHA-M*RO/M3.1527533.1214113.1343193.1113.1154193.091673.1119173.119963.1007873.115402 TOTAL 4*PI*N7.56E 247.56E 247.56E 247.56E 247.56E 247.56E 247.56E 247.56E 247.56E 247.56E 24 4*PI*N/3 VALUES2.52E 242.52E 242.52E 242.52E 242.52E 242.52E 242.52E 242.52E 242.52E 242.52E 24

(4PIN/3)*ALPHAM*RO/M7.95E 247.87E 247.9E 247.84E 247.86E 247.8E 247.85E 247.87E 247.82E 247.86E 24 1-(4PIN/3)*ALPHAM*RO/M7.95E 247.87E 247.9E 247.84E 247.86E 247.8E 247.85E 247.87E 247.82E 247.86E 24

1 2*(4PIN/3)*ALPHAM*RO/M1.59E 251.57E 251.58E 251.57E 251.57E 251.6E 251.57E 251.57E 251.56E 251.57E 25 1-phi12/1 phi120.50.50.50.50.50.50.50.50.50.5

28.8/(2(XM-XN)2)1/4*(1-phi12/1 2*phi12)13.9034613.9706414.0029314.0343114.0647414.094214.1225414.1498314.1759814.20096

Eg value5.0781255.429095.6189325.8191936.0305686.25386.4897076.7391487.0030647.282468

X value0.550.60.650.70.750.80.850.90.951 1-x value0.450.40.350.30.250.20.150.10.050

Xm value1.8341481.8518751.8697731.8878441.906091.9245131.9431131.9618931.9808552 Xn value2.12.12.12.12.12.12.12.12.12.1

(XM/XN)two .7628340.7776510.7927550.8081530.823850.8398520.8561650.8727950.8897480.907029 (XM-XN)20.0706780.0615660.0530040.045010.0376010.0307960.0246130.0190730.0141960.01

2(XM-XN)21.050211.0435981.0374231.031691.0264061.0215751.0172071.0133081.0098881.006956 (2(XM-XN)2)1/41.0123231.0107261.0092271.007831.0065371.0053511.0042741.0033111.0024631.001734

28.8/(2(XM-XN)2)1/428.4494228.4943828.5366828.5762428.6129628.6467228.6774228.7049728.7292428.75014 M-VALUES267274281288294301308315321328.19 RO-VALUES7.357.447.537.627.717.87.97.998.088.17 ALPHA-M 113115116118119121123124126127.32

ALPHA-M*RO/M3.1106743.1226283.108473.1220833.1207143.1355483.154873.145273.1715893.169519 TOTAL 4*PI*N7.56E 247.56E 247.56E 247.56E 247.56E 247.56E 247.56E 247.56E 247.56E 247.56E 24 4*PI*N/3 VALUES2.52E 242.52E 242.52E 242.52E 242.52E 242.52E 242.52E 242.52E 242.52E 242.52E 24

(4PIN/3)*ALPHAM*RO/M7.84E 247.87E 247.84E 247.87E 247.87E 247.91E 247.96E 247.93E 248E 247.99E 24 1-(4PIN/3)*ALPHAM*RO/M7.84E 247.87E 247.84E 247.87E 247.87E 247.91E 247.96E 247.93E 248E 247.99E 24

1 2*(4PIN/3)*ALPHAM*RO/M1.57E 251.57E 251.57E 251.57E 251.57E 251.58E 251.59E 251.59E 251.6E 251.6E 25 1-phi12/1 phi120.50.50.50.50.50.50.50.50.50.5 28.8/(2(XM-XN)2)1/4*(1-phi12/1 2*phi12)14.2247114.2471914.2683414.2881214.3064814.3233614.3387114.3524814.3646214.37507

Eg value7.5784547.8922048.2249978.5782178.9533629.3520569.77605810.2272810.7077911.21983

Doping of Hg component inside a Binary semiconductor like CdTe and altering the composition of do pant has really led to Variation of Band Energy Gap .

Future Plans: 1) Current data group of Electro Negativity values of HgxZn1-xTe II-Mire Ternary Semiconductors and Band Energy Gap values range from the most lately developed techniques and basis sets are ongoing. The information may also be found to show issues with existing ideas and accustomed to indicate where additional research must be completed in future.

2) The technological need for the ternary semiconductor alloy systems looked into bakes an knowledge of the phenomena of alloy broadening necessary, because it might be essential in affecting semiconductor device performance.

Conclusion: 1)This paper must be addressed theoretically to ensure that a simple knowledge of the physics involved with such phenomenon could be acquired regardless of the significance of ternary alloys for device programs.

2)Limited theoretical focus on Electro Negativity values and Band Energy Gap of HgxZn1-xTe II-Mire Ternary Semiconductors within the Composition selection of (

3) Our results concerning the Electro Negativity values and Band Energy Gap of II-Mire Ternary Semiconductors are discovered to be in reasonable agreement using the experimental data

Results and Discussion: Electro Negativity values of Ternary Semiconductors are utilized in calculation of Band Energy Gaps and Echoing indices of Ternary Semiconductors and Band Energy Gap can be used for Electrical passing of semiconductors. This phenomenon can be used in Band Gap Engineering.

Acknowledgments. – This review has achieved positive results from V.R Murthy, K.C Sathyalatha contribution who completed the calculation of physical qualities for many ternary compounds with additivity principle. It’s a pleasure to understand several fruitful discussions with V.R Murthy.

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