Analysis of HgxZn1-xSe II-Mire Ternary Semiconductor Band Energy Gap

Authors: 1)V.Rama Murthy & 2) Alla Srivani Research Scholar Rayalaseema college Kurnool

Abstract: HgxZn1-xSe II-Mire Ternary semiconductor is essential being an x of the constituent within the semiconductor will have significant alterations in calculating Physical Property like Band Energy Gap. These Ternary Compounds could be produced from binary compounds HgTe and ZnTe by changing half from the atoms in a single sub lattice by lower valence atoms, another half by greater valence atoms and looking after average quantity of valence electrons per atom. The subscript X refers back to the alloy content or power of the fabric, which describes proportion from the material added and changed by alloy material. This paper signifies the HgxZn1-xSe II-Mire Ternary Semiconductor Band Energy Gap values

Key phrases: Band Energy Gap, Composition, Electro Negativity, Molecular weight, density, optical Polarizability, II-Mire Ternary Semiconductors.

Introduction: 1)Within this opening talk of HgxZn1-xSe II-Mire Ternary Semiconductor Band Energy Gap Electronegativity values of Ternary Semiconductors are denoted by symbols XM and XN and Band Energy Gap is denoted by Eg

2)Linus Pauling first suggested Electro Negativity in 1932 like a growth and development of valence bond theory,[2] it’s been proven to correlate with many other chemical qualities.

3)The continual variation of physical qualities like Electro Negativity of ternary compounds with relative power of ingredients is the most utility in growth and development of solid-condition technology.

4)In our work, the solid solutions owned by HgxZn1-xSe II-Mire Ternary Semiconductor Band Energy Gap happen to be looked into. To be able to have better knowledge of performance of those solid solutions for just about any particular application, it might be quite essential to focus on the physical qualities like Electro Negativity of those materials.

5)Lately not one other type of material of semiconductors has attracted a lot scientific and commercial attention such as the II-Mire Ternary compounds.

6)Doping of Hg component inside a Binary semiconductor like ZnSe and altering the composition of do pant has really led to cut in Band Energy Gap.

7)Thus effect of do pant boosts the conductivity and reduces this guitar rock band Energy Gap and finds extensive programs

8)The current analysis relates Band Energy Gap and Electro Negativity with variation of composition for HgxZn1-xSe II-Mire Ternary Semiconductor.

9)The fair agreement between calculated and reported values of Band Energy Gaps of HgSe and ZnSe Binary semiconductors give further extension of Band Energy Gaps for Ternary semiconductors.

10)The current work opens new type of method of Band Energy Gap studies in HgxZn1-xSe II-Mire Ternary Semiconductor

Objective: The primary Objective of the paper would be to calculate HgxZn1-xSe II-Mire Ternary Semiconductor Band Energy Gap values

Purpose: The objective of study is HgxZn1-xSe II-Mire Ternary Semiconductor Band Energy Gap and effect of concentration in Electro Negativity values of II-Mire Ternary Semiconductors to represent additivity principle even just in really low concentration range. This paper includes Electro Negativity values of II-Mire ternary semiconductors and Band Energy Gap values in composition range (

Theoretical Impact: Formula: Eg=[28.8/(2(XM-XN)2)1/4*(1-f12/1 2*f12)]Energy (XM/XN)2 Where:f12=[4pN/3]*[aM12*r12]/M12

X value00.10.150.20.250.30.350.40.450.5 1-x value10.90.850.80.750.70.650.60.550.5

CompoundHgxZn1-xSe XM value1.651.6820491.6983061.714721.7312931.748031.764921.7819781.7992011.81659 XN value2.552.552.552.552.552.552.552.552.552.55

(XM/XN)two .4186850.4351080.4435590.4521740.4609570.469910.4790380.4883420.4978280.507497 (XM-XN)20.810.753340.7253830.6976930.6702820.643160.616350.5898580.5636990.53789

2(XM-XN)21.7532111.685691.653341.6219091.5913841.561751.5329921.5050981.4780541.451847 (2(XM-XN)2)1/41.1506911.1394481.1339411.1285131.1231651.11791.1127181.1076211.1026121.097691 28.8/(2(XM-XN)2)1/425.0284525.275425.3981425.520325.6418125.762625.8825826.0016726.119826.23688

M-VALUES144.34157.861164.6215171.382178.1425184.903191.6635198.424205.1845211.945 RO-VALUES5.425.7035.84455.9866.12756.2696.41056.5526.69356.835

ALPHA-M*RO/M2.4580382.4461042.4437722.4434812.4449982.448132.4526922.4585522.4655762.473654 TOTAL 4*PI*N7.56E 247.56E 247.56E 247.56E 247.56E 247.56E 247.56E 247.56E 247.56E 247.56E 24 4*PI*N/3 VALUES2.52E 242.52E 242.52E 242.52E 242.52E 242.52E 242.52E 242.52E 242.52E 242.52E 24

(4PIN/3)*ALPHAM*RO/M6.2E 246.17E 246.16E 246.16E 246.17E 246.2E 246.18E 246.2E 246.22E 246.24E 24 1-(4PIN/3)*ALPHAM*RO/M6.2E 246.17E 246.16E 246.16E 246.17E 246.2E 246.18E 246.2E 246.22E 246.24E 24

1 2*(4PIN/3)*ALPHAM*RO/M1.24E 251.23E 251.23E 251.23E 251.23E 251.2E 251.24E 251.24E 251.24E 251.25E 25 1-phi12/1 phi120.50.50.50.50.50.50.50.50.50.5 28.8/(2(XM-XN)2)1/4*(1-phi12/1 2*phi12)12.5142212.637712.6990712.7601512.8209112.881312.9412913.0008413.059913.11844

Eg value2.8804923.0153953.0873653.1625673.2411793.323393.409413.4994463.5937323.692513

X value0.550.60.650.70.750.80.850.90.951 1-x value0.450.40.350.30.250.20.150.10.050

XM value1.8341481.8518751.8697731.8878441.906091.9245131.9431131.9618931.9808552 XN value2.552.552.552.552.552.552.552.552.552.55

(XM/XN)two .5173540.5274030.5376470.548090.5587360.5695880.5806520.591930.6034270.615148 (XM-XN)20.5124450.4873790.4627090.438450.414620.3912340.3683120.3458690.3239260.3025

2(XM-XN)21.4264651.4018961.3781271.3551481.3329471.3115151.2908411.2709171.2517321.23328 (2(XM-XN)2)1/41.0928621.0881251.0834841.0789381.0744921.0701471.0659041.0617671.0577371.053817 28.8/(2(XM-XN)2)1/426.3528326.4675426.5809326.692926.8033626.912227.0193127.1245927.2279327.32921

M-VALUES218.7055225.466232.2265238.987245.7475252.508259.2685266.029272.7895279.55 RO-VALUES6.97657.1187.25957.4017.54257.6847.82557.9678.1088.25 ALPHA-M 77.829578.95480.078581.20382.327583.45284.576585.70186.825587.95

ALPHA-M*RO/M2.4826882.4925912.5032882.5147122.5268022.5395042.5527722.5665622.5806752.595555 TOTAL 4*PI*N7.56E 247.56E 247.56E 247.56E 247.56E 247.56E 247.56E 247.56E 247.56E 247.56E 24 4*PI*N/3 VALUES2.52E 242.52E 242.52E 242.52E 242.52E 242.52E 242.52E 242.52E 242.52E 242.52E 24

(4PIN/3)*ALPHAM*RO/M6.26E 246.29E 246.31E 246.34E 246.37E 246.4E 246.44E 246.47E 246.51E 246.55E 24 1-(4PIN/3)*ALPHAM*RO/M6.26E 246.29E 246.31E 246.34E 246.37E 246.4E 246.44E 246.47E 246.51E 246.55E 24

1 2*(4PIN/3)*ALPHAM*RO/M1.25E 251.26E 251.26E 251.27E 251.27E 251.28E 251.29E 251.29E 251.3E 251.31E 25 1-phi12/1 phi120.50.50.50.50.50.50.50.50.50.5 28.8/(2(XM-XN)2)1/4*(1-phi12/1 2*phi12)13.1764113.2337713.2904713.3464513.4016813.456113.5096613.562313.6139713.66461

Eg value3.7960513.9046274.018544.1381094.2636784.3956124.5343054.6801754.8336744.995285

Doping of Hg component inside a Binary semiconductor like ZnSe and altering the composition of do pant has really led to Variation of Band Energy Gap .

Future Plans: 1) Current data group of Electro Negativity values of HgxZn1-xSe II-Mire Ternary Semiconductors and Band Energy Gap values range from the most lately developed techniques and basis sets are ongoing. The information may also be found to show issues with existing ideas and accustomed to indicate where additional research must be completed in future.

2) The technological need for the ternary semiconductor alloy systems looked into bakes an knowledge of the phenomena of alloy broadening necessary, because it might be essential in affecting semiconductor device performance.

Conclusion: 1)This paper must be addressed theoretically to ensure that a simple knowledge of the physics involved with such phenomenon could be acquired regardless of the significance of ternary alloys for device programs.

2)Limited theoretical focus on Electro Negativity values and Band Energy Gap of HgxZn1-xSe II-Mire Ternary Semiconductors within the Composition selection of (

3) Our results concerning the Electro Negativity values and Band Energy Gap of II-Mire Ternary Semiconductors are discovered to be in reasonable agreement using the experimental data

Results and Discussion: Electro Negativity values of Ternary Semiconductors are utilized in calculation of Band Energy Gaps and Echoing indices of Ternary Semiconductors and Band Energy Gap can be used for Electrical passing of semiconductors. This phenomenon can be used in Band Gap Engineering.

Acknowledgments. – This review has achieved positive results from V.R Murthy, K.C Sathyalatha contribution who completed the calculation of physical qualities for many ternary compounds with additivity principle. It’s a pleasure to understand several fruitful discussions with V.R Murthy.

References: 1) IUPAC Gold Book internet edition: “Electronegativity”. 2)Pauling, L. (1932). “The Character from the Chemical Bond. IV. The Power of Single Bonds and also the Relative Electronegativity of Atoms”. Journal from the American Chemical Society 54 (9): 3570-3582.. 3)Pauling, Linus (1960). Character from the Chemical Bond. Cornell College Press. pp. 88-107. ISBN 0801403332 . 4) Greenwood, N. N. Earnshaw, A. (1984). Chemistry from the Elements. Pergamon. p. 30. ISBN -08-022057-6. 5) Allred, A. L. (1961). “Electronegativity values from thermochemical data”. Journal of Inorganic and Nuclear Chemistry 17 (3-4): 215-221.. 6) Mulliken, R. S. (1934). “A Brand New Electroaffinity Scale Along with Data on Valence States as well as on Valence Ionization Potentials and Electron Affinities”. Journal of Chemical Physics 2: 782-793.. 7) Mulliken, R. S. (1935). “Electronic Structures of Molecules XI. Electroaffinity, Molecular Orbitals and Dipole Moments”. J. Chem. Phys. 3: 573-585.. 8) Pearson, R. G. (1985). “Absolute electronegativity and absolute hardness of Lewis chemicals and bases”. J. Am. Chem. Soc. 107: 6801.. 9) Huheey, J. E. (1978). Inorganic Chemistry (second Edn.). New You are able to: Harper & Row. p. 167. 10)Allred, A. L. Rochow, E. G. (1958). “A scale of electronegativity according to electrostatic pressure”. Journal of Inorganic and Nuclear Chemistry 5: 264.. 11)Prasada rao., K., Hussain, O.Md., Reddy, K.T.R., Reddy, P.S., Uthana, S., Naidu, B.S. and Reddy, P.J., Optical Materials, 5, 63-68 (1996). 12)Ghosh, D.K., Samantha, L.K. and Bhar, G.C., Pramana, 23(4), 485 (1984). 13)CRC Guide of Physics and Chemistry, 76th edition. 14) Sanderson, R. T. (1983). “Electronegativity and bond energy”. Journal from the American Chemical Society 105: 2259 15)Murthy, Y.S., Naidu, B.S. and Reddy, P.J., -Material Science &Engineering,-B38, 175 (1991)

Leave a comment

Your email address will not be published. Required fields are marked *